Infineon to build Europe’s first high-volume GaN facility

Infineon Technologies AG has announced a new investment to establish the world’s first high-volume manufacturing facility for next-generation gallium nitride (GaN) power semiconductors on 300-millimeter wafers in Europe.

• Infineon will invest around €1.1 billion in its Villach site by 2034; production is scheduled to start by the end of 2027.
• The project is supported by €319 million in funding under the European Chips Act; the company says the new GaN chips will serve applications including AI data centers, energy infrastructure, e-mobility, robotics and consumer electronics.